The Talbot Effect can be used for patterning a large wafer with a sub-micron periodically arranged features in non-contact manner.
By means of Fourier Optics the light intensity distribution, known as well as “Talbot Carpet” (Figure on the right), behind the mask can be computed and used to calculate an aerial image of a pattern.
- calculation can be done for arbitrary mask of two types: amplitude or phase,
- output the Talbot Carpet,
- calculation of an aerial image for predefined integration distance,
- calculation of a latent image in resist after exposition using the Dill model,
- simulation of the development process using the Notch model of a resist.
- Optimisation of memory management
- Scientific data structure (HDF5) for large data storage
- Design User Interface (UI) and software architecture
- Testing and refactoring
Fig. (Left) Latent image of resist after exposure; (middle) Final resist representation after short development time; (Right) Final resist representation after long development time.
Papers related to this work:
- E.D. Le Bouldbar, P. J. P. Chausse, S. M. Lis, P. A. Shields, “Displacement Talbot lithography: an alternative technique to fabricate nanostructured metamaterials “, Proc. of SPIE Vol. 10248 102480Q-1