Far-Field LED Radiation


An array of nano-pillar LEDs was simulated by means of finite-difference time-domain (FDTD) method. The open access software (MEEP) was used as FDTD engine. Additional functionality like near field to the far-field transformation was written in Matlab. The example of the simulation result along side with the real device measurements is shown on the right side image.



  • FDTD simulation of near-field above LED device,
  • near-field to the far field radiation pattern transformation by dedicated¬†Matlab functions,
  • simulation of an incoherent radiation, which was achieved by adding multiple simulations for orthogonal dipoles,
  • investigation dipoles in various positions,
  • solving the LED model for a single wavelength and/or for full spectrum of LED emission.


Programming skills:

  • Scheme,
  • Matlab,
  • Bash scripting,
  • Parallel computation.


Related video: FDTD simulation of Nano-LEDs


Papers related to this work:

  • S. M. Lis, P.-M. Coulon, E. D. Le Boulbar, I. Girgel, C. J. Lewins, P. A. Shields, D. W. E. Allsopp, “Controlling of the Angular Emission of InGaN/GaN Core-Shell nano-LEDs array”, 11th International Conference on Nitride Semiconductors,¬†Beijing, China (2015) – oral presentation
  • S. M. Lis, S. E. J. O’Kane, S. A. Fox, C. J. Lewins, Y. D. Zhuang, J. Sarma, P. A. Shields, D. W. E. Allsopp, “Designing InGaN/GaN nano-LED arrays for entendue-limited applications”, E-MRS 2014 Spring Meeting, Lille, France (2014) – oral presentation
  • S. M. Lis, S. E. J. O’Kane, C. J. Lewins, S. A. Fox, Y. D. Zhuang, J. Sarma, D. W. E. Allsopp, “Factors Affecting the Directionality of InGaN/GaN Nanorod LED Arrays”, 10th International Conference on Nitride Semiconductors, Washington D.C., USA (2013) – oral presentation